Effect of Ta2O5 doping on electrical characteristics of SrTiO3 metal-insulator-metal capacitors

Ching Chien Huang*, Chun Hu Cheng, Bo Heng Liou, Fon Shan Yeh, Albert Chin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510ppm/V2 and a high capacitance density of ̃20fF/μm 2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and longterm reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.

原文英語
頁(從 - 到)814011-814016
頁數6
期刊Japanese Journal of Applied Physics
48
發行號8 Part 1
DOIs
出版狀態已發佈 - 2009
對外發佈

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

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