Effect of surface texture and backside patterned reflector on the AlGaInP light-emitting diode: High extraction of waveguided light

Ya Ju Lee*, Chia Jung Lee, Chih Hao Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

22 引文 斯高帕斯(Scopus)

摘要

This paper describes a novel structure of an AlGaInP light-emitting diode (LED) to extract the waveguided light for high-brightness applications. Four devices are considered and compared. They are AlGaInP-sapphire LEDs with: 1) a planar Ag reflector (LED-A); 2) a patterned Ag reflector (LED-B); 3) a planar Ag reflector and surface-roughened features (LED-C); and 4) a patterned Ag reflector and surface-roughened features (LED-D). The patterned Ag reflector can be used to direct some of the waveguided light that bounces within the AlGaInP LED and sapphire substrate to the top escape cone of the LED surface. Additionally, the roughened features, which are randomly distributed on the LED surface, enable the waveguided light that is trapped inside the LED chip to be coupled efficiently into the air. As a result, the external quantum efficiencies of LED-A, LED-B, LED-C, and LED-D measured at I=350 mA are η=9.20%, 10.46%, 15.22%, and 16.75%, respectively.

原文英語
文章編號5738955
頁(從 - 到)636-641
頁數6
期刊IEEE Journal of Quantum Electronics
47
發行號5
DOIs
出版狀態已發佈 - 2011

ASJC Scopus subject areas

  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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