Effect of SnO2 addition on the dielectric properties of Ba 2Ti9O20 ceramics in the high-frequency regime

Hsiang Lin Liu; Hsin I. Chen; Yuan Tai Tzeng; Chia Ta Chia; Kuo Chien Hsu; Chen Chung Chi; Chi Ben Chang; Keh Chyang Leou; I. Nan Lin

doi:10.1063/1.2363605

Effect of SnO₂ addition on the dielectric properties of Ba ₂Ti₉O₂₀ ceramics in the high-frequency regime

Hsiang Lin Liu^*, Hsin I. Chen, Yuan Tai Tzeng, Chia Ta Chia, Kuo Chien Hsu, Chen Chung Chi, Chi Ben Chang, Keh Chyang Leou, I. Nan Lin

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

The effect of Sn O2 addition on the high-frequency dielectric properties of Ba2 Ti9 O20 ceramics has been investigated using terahertz time-domain spectroscopy, far-infrared (FIR) reflectivity, and Raman-scattering measurements. The dielectric constants determined from the terahertz and FIR spectra are smaller than that taken in the microwave frequency region. In contrast, the increase of the dielectric loss with increasing frequency is due to some resonance modes above 1 THz. Importantly, our data clearly show that the Sn O2 (2.4 mole %) addition degraded the dielectric properties of Ba2 Ti9 O20 ceramics, which is ascribed to the deterioration on the coherency of lattice vibrational characteristics for these materials.

原文	英語
文章編號	094104
期刊	Journal of Applied Physics
卷	100
發行號	9
DOIs	https://doi.org/10.1063/1.2363605
出版狀態	已發佈 - 2006

ASJC Scopus subject areas

一般物理與天文學

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10.1063/1.2363605

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@article{0a9f0351c8334c5998ebdaab6c496326,

title = "Effect of SnO2 addition on the dielectric properties of Ba 2Ti9O20 ceramics in the high-frequency regime",

abstract = "The effect of Sn O2 addition on the high-frequency dielectric properties of Ba2 Ti9 O20 ceramics has been investigated using terahertz time-domain spectroscopy, far-infrared (FIR) reflectivity, and Raman-scattering measurements. The dielectric constants determined from the terahertz and FIR spectra are smaller than that taken in the microwave frequency region. In contrast, the increase of the dielectric loss with increasing frequency is due to some resonance modes above 1 THz. Importantly, our data clearly show that the Sn O2 (2.4 mole %) addition degraded the dielectric properties of Ba2 Ti9 O20 ceramics, which is ascribed to the deterioration on the coherency of lattice vibrational characteristics for these materials.",

author = "Liu, {Hsiang Lin} and Chen, {Hsin I.} and Tzeng, {Yuan Tai} and Chia, {Chia Ta} and Hsu, {Kuo Chien} and Chi, {Chen Chung} and Chang, {Chi Ben} and Leou, {Keh Chyang} and Lin, {I. Nan}",

note = "Funding Information: The authors would like to gratefully acknowledge the financial support from the National Science Council of Republic of China under Grant Nos. NSC 94-2112-M-003-002, 94-2112-M-001-015, and 94-2120-M-007-013 and the National Taiwan Normal University under Grant No. ORD94-3.",

year = "2006",

doi = "10.1063/1.2363605",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

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TY - JOUR

T1 - Effect of SnO2 addition on the dielectric properties of Ba 2Ti9O20 ceramics in the high-frequency regime

AU - Liu, Hsiang Lin

AU - Chen, Hsin I.

AU - Tzeng, Yuan Tai

AU - Chia, Chia Ta

AU - Hsu, Kuo Chien

AU - Chi, Chen Chung

AU - Chang, Chi Ben

AU - Leou, Keh Chyang

AU - Lin, I. Nan

N1 - Funding Information: The authors would like to gratefully acknowledge the financial support from the National Science Council of Republic of China under Grant Nos. NSC 94-2112-M-003-002, 94-2112-M-001-015, and 94-2120-M-007-013 and the National Taiwan Normal University under Grant No. ORD94-3.

PY - 2006

Y1 - 2006

N2 - The effect of Sn O2 addition on the high-frequency dielectric properties of Ba2 Ti9 O20 ceramics has been investigated using terahertz time-domain spectroscopy, far-infrared (FIR) reflectivity, and Raman-scattering measurements. The dielectric constants determined from the terahertz and FIR spectra are smaller than that taken in the microwave frequency region. In contrast, the increase of the dielectric loss with increasing frequency is due to some resonance modes above 1 THz. Importantly, our data clearly show that the Sn O2 (2.4 mole %) addition degraded the dielectric properties of Ba2 Ti9 O20 ceramics, which is ascribed to the deterioration on the coherency of lattice vibrational characteristics for these materials.

AB - The effect of Sn O2 addition on the high-frequency dielectric properties of Ba2 Ti9 O20 ceramics has been investigated using terahertz time-domain spectroscopy, far-infrared (FIR) reflectivity, and Raman-scattering measurements. The dielectric constants determined from the terahertz and FIR spectra are smaller than that taken in the microwave frequency region. In contrast, the increase of the dielectric loss with increasing frequency is due to some resonance modes above 1 THz. Importantly, our data clearly show that the Sn O2 (2.4 mole %) addition degraded the dielectric properties of Ba2 Ti9 O20 ceramics, which is ascribed to the deterioration on the coherency of lattice vibrational characteristics for these materials.

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Effect of SnO2 addition on the dielectric properties of Ba 2Ti9O20 ceramics in the high-frequency regime

摘要

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指紋

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Effect of SnO₂ addition on the dielectric properties of Ba ₂Ti₉O₂₀ ceramics in the high-frequency regime