Effect of rapid thermal annealing on beryllium implanted p-type GaN

Hung Wen Huang; C. C. Kao; J. Y. Tsai; C. C. Yu; C. F. Chu; J. Y. Lee; S. Y. Kuo; C. F. Lin; H. C. Kuo; S. C. Wang

doi:10.1016/j.mseb.2003.12.001

Effect of rapid thermal annealing on beryllium implanted p-type GaN

Hung Wen Huang, C. C. Kao, J. Y. Tsai, C. C. Yu, C. F. Chu, J. Y. Lee, S. Y. Kuo, C. F. Lin, H. C. Kuo, S. C. Wang

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100°C for 15s. Furthermore, with equal total isothermal time of 60s, we compared the multiple step annealing (MSA) at 1100°C for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100°C, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples.

原文	英語
頁（從 - 到）	237-240
頁數	4
期刊	Materials Science and Engineering: B
卷	107
發行號	3
DOIs	https://doi.org/10.1016/j.mseb.2003.12.001
出版狀態	已發佈 - 2004 3月 25
對外發佈	是

ASJC Scopus subject areas

一般材料科學
凝聚態物理學
材料力學
機械工業

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10.1016/j.mseb.2003.12.001

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title = "Effect of rapid thermal annealing on beryllium implanted p-type GaN",

abstract = "We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100°C for 15s. Furthermore, with equal total isothermal time of 60s, we compared the multiple step annealing (MSA) at 1100°C for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100°C, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples.",

keywords = "Beryllium, GaN, Implantation, MSA, RTA, SSA",

author = "Huang, {Hung Wen} and Kao, {C. C.} and Tsai, {J. Y.} and Yu, {C. C.} and Chu, {C. F.} and Lee, {J. Y.} and Kuo, {S. Y.} and Lin, {C. F.} and Kuo, {H. C.} and Wang, {S. C.}",

note = "Funding Information: This work was supported in part by National Science Council of Republic of China (ROC) in Taiwan under contract No. NSC 92-2215-E-009-015 and by the Academic Excellence Program of the ROC Ministry of Education under the contract No. 88-FA06-AB. The authors would like to thank Dr. G.C. Chi of National Central University (NCU) for the use of the ion implantation facility.",

year = "2004",

month = mar,

day = "25",

doi = "10.1016/j.mseb.2003.12.001",

language = "English",

volume = "107",

pages = "237--240",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Effect of rapid thermal annealing on beryllium implanted p-type GaN

AU - Huang, Hung Wen

AU - Kao, C. C.

AU - Tsai, J. Y.

AU - Yu, C. C.

AU - Chu, C. F.

AU - Lee, J. Y.

AU - Kuo, S. Y.

AU - Lin, C. F.

AU - Kuo, H. C.

AU - Wang, S. C.

N1 - Funding Information: This work was supported in part by National Science Council of Republic of China (ROC) in Taiwan under contract No. NSC 92-2215-E-009-015 and by the Academic Excellence Program of the ROC Ministry of Education under the contract No. 88-FA06-AB. The authors would like to thank Dr. G.C. Chi of National Central University (NCU) for the use of the ion implantation facility.

PY - 2004/3/25

Y1 - 2004/3/25

N2 - We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100°C for 15s. Furthermore, with equal total isothermal time of 60s, we compared the multiple step annealing (MSA) at 1100°C for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100°C, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples.

AB - We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100°C for 15s. Furthermore, with equal total isothermal time of 60s, we compared the multiple step annealing (MSA) at 1100°C for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100°C, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples.

KW - Beryllium

KW - GaN

KW - Implantation

KW - MSA

KW - RTA

KW - SSA

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DO - 10.1016/j.mseb.2003.12.001

M3 - Article

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SN - 0921-5107

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JO - Materials Science and Engineering: B

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Effect of rapid thermal annealing on beryllium implanted p-type GaN

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