Effect of rapid thermal annealing on beryllium implanted p-type GaN

Hung Wen Huang, C. C. Kao, J. Y. Tsai, C. C. Yu, C. F. Chu, J. Y. Lee, S. Y. Kuo, C. F. Lin, H. C. Kuo, S. C. Wang

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)


We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100°C for 15s. Furthermore, with equal total isothermal time of 60s, we compared the multiple step annealing (MSA) at 1100°C for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100°C, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples.

頁(從 - 到)237-240
期刊Materials Science and Engineering: B
出版狀態已發佈 - 2004 3月 25

ASJC Scopus subject areas

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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