TY - JOUR
T1 - Effect of plasma fluorination in p-type SnO TFTs
T2 - Experiments, modeling, and simulation
AU - Rajshekar, Kadiyam
AU - Hsu, Hsiao Hsuan
AU - Kumar, Koppolu Uma Mahendra
AU - Sathyanarayanan, P.
AU - Velmurugan, V.
AU - Cheng, Chun Hu
AU - Kannadassan, D.
N1 - Funding Information:
Manuscript received December 19, 2018; accepted January 18, 2019. Date of publication February 6, 2019; date of current version February 22, 2019. This work was supported by the Council of Scientific and Industrial Research (CSIR), Government of India, under Grant 09/844(0046)/2018-EMR-I. The review of this paper was arranged by Editor K. C. Choi. (Corresponding authors: Chun-Hu Cheng; D. Kannadassan.) K. Rajshekar is with the School of Electronics Engineering, Vellore Institute of Technology, Vellore 632014, India.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/3
Y1 - 2019/3
N2 - With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/Hf02 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high I ON /I OFF ratio of ∼10 7 and low substhreshold swing of ∼100 mV/dec and field-effect mobility (μ FE ) of 2.13cm 2 V -1 s- 1 .
AB - With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/Hf02 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high I ON /I OFF ratio of ∼10 7 and low substhreshold swing of ∼100 mV/dec and field-effect mobility (μ FE ) of 2.13cm 2 V -1 s- 1 .
KW - Density of states (DOS)
KW - Plasma fluorination
KW - Thin-film transistors (TFTs)
KW - Tin monoxide (SnO)
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U2 - 10.1109/TED.2019.2895042
DO - 10.1109/TED.2019.2895042
M3 - Article
AN - SCOPUS:85062268879
VL - 66
SP - 1314
EP - 1321
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 3
M1 - 8636528
ER -