Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation

Kadiyam Rajshekar, Hsiao Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun Hu Cheng, D. Kannadassan

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/Hf02 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high I ON /I OFF ratio of ∼10 7 and low substhreshold swing of ∼100 mV/dec and field-effect mobility (μ FE ) of 2.13cm 2 V -1 s- 1 .

原文英語
文章編號8636528
頁(從 - 到)1314-1321
頁數8
期刊IEEE Transactions on Electron Devices
66
發行號3
DOIs
出版狀態已發佈 - 2019 三月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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