Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory

Ming Daou Lee*, Chia Hua Ho, Chi Kuen Lo, Tai Yen Peng, Yeong Der Yao


研究成果: 雜誌貢獻期刊論文同行評審

16 引文 斯高帕斯(Scopus)


The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.

頁(從 - 到)939-943
期刊IEEE Transactions on Magnetics
出版狀態已發佈 - 2007 二月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程


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