Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

Piyas Samanta; Heng Sheng Huang; Shuang Yuan Chen; Chuan Hsi Liu

doi:10.1109/EDSSC.2014.7061072

Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

Piyas Samanta, Heng Sheng Huang, Shuang Yuan Chen, Chuan Hsi Liu

機電工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n⁺-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density D_it by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage V_G. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.

原文	英語
主出版物標題	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781479923342
DOIs	https://doi.org/10.1109/EDSSC.2014.7061072
出版狀態	已發佈 - 2014 三月 13
事件	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, 中国持續時間: 2014 六月 18 → 2014 六月 20

出版系列

名字	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

其他

其他	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
國家/地區	中国
城市	Chengdu
期間	2014/06/18 → 2014/06/20

ASJC Scopus subject areas

電氣與電子工程
硬體和架構

存取文件

10.1109/EDSSC.2014.7061072

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引用此

Samanta, P., Huang, H. S., Chen, S. Y., & Liu, C. H. (2014). Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. 於 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 [7061072] (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2014.7061072

Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. / Samanta, Piyas; Huang, Heng Sheng; Chen, Shuang Yuan; Liu, Chuan Hsi.

2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7061072 (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Samanta, P, Huang, HS, Chen, SY & Liu, CH 2014, Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. 於 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014., 7061072, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Chengdu, 中国, 2014/06/18. https://doi.org/10.1109/EDSSC.2014.7061072

Samanta P, Huang HS, Chen SY, Liu CH. Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. 於 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7061072. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). https://doi.org/10.1109/EDSSC.2014.7061072

Samanta, Piyas ; Huang, Heng Sheng ; Chen, Shuang Yuan ; Liu, Chuan Hsi. / Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

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title = "Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices",

abstract = "A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.",

keywords = "PBTI lifetime, pMOS, threshold voltage shift",

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PY - 2014/3/13

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N2 - A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.

AB - A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.

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Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

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