Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

Piyas Samanta, Heng Sheng Huang, Shuang Yuan Chen, Chuan Hsi Liu

研究成果: 書貢獻/報告類型會議貢獻

摘要

A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.

原文英語
主出版物標題2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479923342
DOIs
出版狀態已發佈 - 2014 三月 13
事件2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, 中国
持續時間: 2014 六月 182014 六月 20

出版系列

名字2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

其他

其他2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
國家中国
城市Chengdu
期間14/6/1814/6/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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  • 引用此

    Samanta, P., Huang, H. S., Chen, S. Y., & Liu, C. H. (2014). Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. 於 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 [7061072] (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2014.7061072