Effect of capping layer on the ferroelectricity of hafnium oxide

Jui Hsuan Chang, Chen Gui Zheng, Hsuan Han Chen, Pei Tien Chen, Cun Bo Liu, Kai Yang Huang, Hsiao Hsuan Hsu*, Chun Hu Cheng, Wu Ching Chou, Su Ting Han

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

In this work, we investigate the effect of a capping layer of aluminum oxide (AlOx) on dopant-free hafnium-oxide (HfO2) ferroelectric layer. According to our experimental results, the AlOx-capped HfO2 ferroelectric capacitor exhibits the significant improvement on ferroelectric polarization strength and also presents a comparable electrical stress resistance in comparison with control HfO2 ferroelectric capacitor with a very weak ferroelectric hysteresis. An additional nitrogen treatment on AlOx capping layer effectively alleviate the stress-induced generation of defect traps near the interface of tantalum nitride (TaN) electrode under negative-bias voltage stress. Therefore, the performance improvement can be ascribed to the introduction of AlOx capping layer and well-controlled nitrogen plasma treatment to improve interface traps and stabilize the ferroelectric phase transformation during high-temperature annealing process.

原文英語
文章編號139274
期刊Thin Solid Films
753
DOIs
出版狀態已發佈 - 2022 7月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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