Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs

Hsien Chin Chiu, Min Li Chou, Chun Hu Cheng, Hsuan Ling Kao*, Cheng Lin Cho

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

This study investigated the effects of temperature and body bias on drain current flicker noise (1/f) in 40-nm nMOSFETs. The 1/f noise is attributable to the charge number fluctuation correlating with the mobility fluctuation. At 300 K, as the depletion width was decreased, 1/f noise decreased with the body bias from − 0.5 to + 0.5 V in the weak inversion; conversely, 1/f noise was independent of the body bias because of the neglected depletion charge capacitance in the strong inversion. When the temperature was below 150 K, 1/f noise increased when the drain voltage was low because of the Fermi level toward the band edge, which has a higher trap density and corresponds to the inverse square of the subthreshold swing. However, when the drain voltage was high, 1/f noise was dominated by the mobility fluctuation because a wider strong inversion region at 150 K resulted in a lower 1/f noise and insignificant body effect. The analysis of this behavior in 40-nm devices may assist in determining the optimal device fabrication methods and circuit design.

原文英語
頁(從 - 到)267-271
頁數5
期刊Microelectronics Reliability
78
DOIs
出版狀態已發佈 - 2017 十一月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 安全、風險、可靠性和品質
  • 表面、塗料和薄膜
  • 電氣與電子工程

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