Effect of Ag buffer layer to ultrathin Co films on Si(lll) surface

J. S. Tsay; Y. D. Yao; Y. Lion; S. F. Lee; C. S. Yang

doi:10.1109/20.801074

Effect of Ag buffer layer to ultrathin Co films on Si(lll) surface

J. S. Tsay^*, Y. D. Yao, Y. Lion, S. F. Lee, C. S. Yang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The magnetic' properties of ultrathin Co/Ag/Si(1ll) films were studied by surface magneto-optic Kerr effect. A magnetic phase diagram for binary-metal Co/Ag films deposited on Si(lll) surfaces has been successfully established. The phase diagram can be divided into four regions: nonfcrromagnetic Co-Si compound; low Curie temperature Co film; canted out-of-plane anisotropy; in-plane anisotropy. The ferromagnetic inactive layers at the Co/Si interface are formed due to intermixing of Co and Si; and can be efficiently reduced by the Ag buffer layer. We have demonstrated that the inactive layer thickness is reduced from 2.1 ML for Co/Si(lll) to 1.0 for Co/2.8MLAg/Si(lll), and 0.0 for Co/5.6MLAg/Si(lll).

原文	英語
頁（從 - 到）	3028-3030
頁數	3
期刊	IEEE Transactions on Magnetics
卷	35
發行號	5 PART 1
DOIs	https://doi.org/10.1109/20.801074
出版狀態	已發佈 - 1999
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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@article{4d00b01e97024cdb99a9c893507f9bd4,

title = "Effect of Ag buffer layer to ultrathin Co films on Si(lll) surface",

abstract = "The magnetic' properties of ultrathin Co/Ag/Si(1ll) films were studied by surface magneto-optic Kerr effect. A magnetic phase diagram for binary-metal Co/Ag films deposited on Si(lll) surfaces has been successfully established. The phase diagram can be divided into four regions: nonfcrromagnetic Co-Si compound; low Curie temperature Co film; canted out-of-plane anisotropy; in-plane anisotropy. The ferromagnetic inactive layers at the Co/Si interface are formed due to intermixing of Co and Si; and can be efficiently reduced by the Ag buffer layer. We have demonstrated that the inactive layer thickness is reduced from 2.1 ML for Co/Si(lll) to 1.0 for Co/2.8MLAg/Si(lll), and 0.0 for Co/5.6MLAg/Si(lll).",

keywords = "Cobalt, Magneto-optic kerr effect, Ultrathin film",

author = "Tsay, {J. S.} and Yao, {Y. D.} and Y. Lion and Lee, {S. F.} and Yang, {C. S.}",

note = "Funding Information: This work was supported in part by the National Science Council of ROC under Grant NO. NSC 88-21 12-M-001-038.",

year = "1999",

doi = "10.1109/20.801074",

language = "English",

volume = "35",

pages = "3028--3030",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 1",

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TY - JOUR

T1 - Effect of Ag buffer layer to ultrathin Co films on Si(lll) surface

AU - Tsay, J. S.

AU - Yao, Y. D.

AU - Lion, Y.

AU - Lee, S. F.

AU - Yang, C. S.

N1 - Funding Information: This work was supported in part by the National Science Council of ROC under Grant NO. NSC 88-21 12-M-001-038.

PY - 1999

Y1 - 1999

N2 - The magnetic' properties of ultrathin Co/Ag/Si(1ll) films were studied by surface magneto-optic Kerr effect. A magnetic phase diagram for binary-metal Co/Ag films deposited on Si(lll) surfaces has been successfully established. The phase diagram can be divided into four regions: nonfcrromagnetic Co-Si compound; low Curie temperature Co film; canted out-of-plane anisotropy; in-plane anisotropy. The ferromagnetic inactive layers at the Co/Si interface are formed due to intermixing of Co and Si; and can be efficiently reduced by the Ag buffer layer. We have demonstrated that the inactive layer thickness is reduced from 2.1 ML for Co/Si(lll) to 1.0 for Co/2.8MLAg/Si(lll), and 0.0 for Co/5.6MLAg/Si(lll).

AB - The magnetic' properties of ultrathin Co/Ag/Si(1ll) films were studied by surface magneto-optic Kerr effect. A magnetic phase diagram for binary-metal Co/Ag films deposited on Si(lll) surfaces has been successfully established. The phase diagram can be divided into four regions: nonfcrromagnetic Co-Si compound; low Curie temperature Co film; canted out-of-plane anisotropy; in-plane anisotropy. The ferromagnetic inactive layers at the Co/Si interface are formed due to intermixing of Co and Si; and can be efficiently reduced by the Ag buffer layer. We have demonstrated that the inactive layer thickness is reduced from 2.1 ML for Co/Si(lll) to 1.0 for Co/2.8MLAg/Si(lll), and 0.0 for Co/5.6MLAg/Si(lll).

KW - Cobalt

KW - Magneto-optic kerr effect

KW - Ultrathin film

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U2 - 10.1109/20.801074

DO - 10.1109/20.801074

M3 - Article

AN - SCOPUS:0033184092

SN - 0018-9464

VL - 35

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EP - 3030

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 PART 1

ER -

Effect of Ag buffer layer to ultrathin Co films on Si(lll) surface

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