Effect of Ag buffer layer to ultrathin Co films on Si(111) surface

J. S. Tsay; Y. D. Yao; Y. Liou; S. F. Lee; C. S. Yang

doi:10.1109/intmag.1999.837766

Effect of Ag buffer layer to ultrathin Co films on Si(111) surface

J. S. Tsay^*, Y. D. Yao, Y. Liou, S. F. Lee, C. S. Yang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.

原文	英語
頁（從 - 到）	FP-06
期刊	Digests of the Intermag Conference
DOIs	https://doi.org/10.1109/intmag.1999.837766
出版狀態	已發佈 - 1999
對外發佈	是
事件	Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea 持續時間: 1999 5月 18 → 1999 5月 21

ASJC Scopus subject areas

電氣與電子工程

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10.1109/intmag.1999.837766

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title = "Effect of Ag buffer layer to ultrathin Co films on Si(111) surface",

abstract = "Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.",

author = "Tsay, {J. S.} and Yao, {Y. D.} and Y. Liou and Lee, {S. F.} and Yang, {C. S.}",

year = "1999",

doi = "10.1109/intmag.1999.837766",

language = "English",

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journal = "Digests of the Intermag Conference",

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T1 - Effect of Ag buffer layer to ultrathin Co films on Si(111) surface

AU - Tsay, J. S.

AU - Yao, Y. D.

AU - Liou, Y.

AU - Lee, S. F.

AU - Yang, C. S.

PY - 1999

Y1 - 1999

N2 - Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.

AB - Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.

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JF - Digests of the Intermag Conference

SN - 0074-6843

T2 - Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99'

Y2 - 18 May 1999 through 21 May 1999

ER -

Effect of Ag buffer layer to ultrathin Co films on Si(111) surface

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