Dynamic Behaviors and Training Effects in TiN/Ti/HfOx/TiN-Nanolayered Memristors with Controllable Quantized Conductance States: Implications for Quantum and Neuromorphic Computing Devices

Min Hsuan Peng, Ching Yang Pan, Hao Xuan Zheng, Ting Chang Chang, Pei Hsun Jiang

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Controllable quantized conductance states of TiN/Ti/HfOx/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differentiation of the conditions of the set procedure, which involves critical monitoring of the measured bias voltage. An intriguing training effect that leads to faster switching of the states is also observed during the operation. Detailed analyses of the low- and high-resistance states under different compliance currents reveal a complete picture of the structural evolution and dynamic behaviors of the conductive filament in the HfOx layer. This study provides a closer inspection on the quantum-level manipulation of nanoscale atomic configurations in the memristors, which helps to develop essential knowledge about the design and fabrication of the future memristor-based quantum devices and neuromorphic computing devices.

原文英語
頁(從 - 到)11296-11304
頁數9
期刊ACS Applied Nano Materials
4
發行號10
DOIs
出版狀態已發佈 - 2021 10月 22

ASJC Scopus subject areas

  • 材料科學(全部)

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