Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin*, Ming Dou Ker

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

原文英語
主出版物標題ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
頁面707-709
頁數3
DOIs
出版狀態已發佈 - 2010
對外發佈
事件2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中国
持續時間: 2010 十一月 12010 十一月 4

出版系列

名字ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

其他

其他2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
國家/地區中国
城市Shanghai
期間2010/11/012010/11/04

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程

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