Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin; Ming Dou Ker

doi:10.1109/ICSICT.2010.5667382

Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin^*, Ming Dou Ker

^*此作品的通信作者

研究成果: 書貢獻/報告類型 › 會議論文篇章

2 引文斯高帕斯（Scopus）

摘要

Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

原文	英語
主出版物標題	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
頁面	707-709
頁數	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667382
出版狀態	已發佈 - 2010
對外發佈	是
事件	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中国持續時間: 2010 11月 1 → 2010 11月 4

出版系列

名字	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

其他

其他	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
國家/地區	中国
城市	Shanghai
期間	2010/11/01 → 2010/11/04

ASJC Scopus subject areas

硬體和架構
電氣與電子工程

存取文件

10.1109/ICSICT.2010.5667382

其它文件與鏈接

引用此

Lin, C. Y., & Ker, M. D. (2010). Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. 於 ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (頁 707-709). 文章 5667382 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667382

Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. / Lin, Chun Yu; Ker, Ming Dou.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 707-709 5667382 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lin, CY & Ker, MD 2010, Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. 於 ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667382, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 頁 707-709, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 中国, 2010/11/01. https://doi.org/10.1109/ICSICT.2010.5667382

Lin CY, Ker MD. Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. 於 ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 707-709. 5667382. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667382

Lin, Chun Yu ; Ker, Ming Dou. / Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. 頁 707-709 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{21c7ab1987114e8eb656cb344e531997,

title = "Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits",

abstract = "Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.",

keywords = "Electrostatic discharges (ESD), Radio-frequency integrated circuit (RF IC), Silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Ker, {Ming Dou}",

year = "2010",

doi = "10.1109/ICSICT.2010.5667382",

language = "English",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "707--709",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

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TY - GEN

T1 - Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

AU - Lin, Chun Yu

AU - Ker, Ming Dou

PY - 2010

Y1 - 2010

N2 - Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

AB - Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

KW - Electrostatic discharges (ESD)

KW - Radio-frequency integrated circuit (RF IC)

KW - Silicon-controlled rectifier (SCR)

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Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

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