Dual-mode operation of 2D material-base hot electron transistors

Yann Wen Lan*, Carlos M. Torres, Xiaodan Zhu, Hussam Qasem, James R. Adleman, Mitchell B. Lerner, Shin Hung Tsai, Yumeng Shi, Lain Jong Li, Wen Kuan Yeh, Kang L. Wang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS 2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS 2 in the base region) with the application of a negative collector-base potential (V CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of V CB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying V CB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

原文英語
文章編號32503
期刊Scientific reports
6
DOIs
出版狀態已發佈 - 2016 九月 1
對外發佈

ASJC Scopus subject areas

  • 多學科

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