Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET

C. Y. Liao; K. Y. Hsiang; Z. F. Lou; C. Y. Lin; W. C. Ray; F. S. Chang; C. C. Wang; Z. X. Li; H. C. Tseng; J. Y. Lee; P. H. Chen; J. H. Tsai; P. G. Chen; M. H. Lee

doi:10.1109/SNW56633.2022.9889059

Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf_1-xZr_xO₂FET

C. Y. Liao
, K. Y. Hsiang
, Z. F. Lou
, C. Y. Lin
, W. C. Ray
, F. S. Chang
, C. C. Wang
, Z. X. Li
, H. C. Tseng
, J. Y. Lee
, P. H. Chen
, J. H. Tsai
, P. G. Chen^*
, M. H. Lee

^*此作品的通信作者

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

The dual-mode (D-mode & E-mode) GaN MOS-HEMT is achieved simultaneously by a Cascode configuration with Si ferroelectric (FE) FET. Due to hole absence in 2DEG of GaN HEMT, the conventional FE-gate stack on GaN is difficult to obtain FE-hysteresis with dipole switching in FE-layer. The proposed method is a solution to accomplish ferroelectric hysteresis for modulated modes of GaN-FET.

原文	英語
主出版物標題	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665459792
DOIs	https://doi.org/10.1109/SNW56633.2022.9889059
出版狀態	已發佈 - 2022
事件	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 - Honolulu, 美国持續時間: 2022 6月 11 → 2022 6月 12

出版系列

名字	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

會議

會議	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
國家/地區	美国
城市	Honolulu
期間	2022/06/11 → 2022/06/12

ASJC Scopus subject areas

硬體和架構
電氣與電子工程
安全、風險、可靠性和品質
電子、光磁材料

存取文件

10.1109/SNW56633.2022.9889059

其它文件與鏈接

引用此

Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Ray, W. C., Chang, F. S., Wang, C. C., Li, Z. X., Tseng, H. C., Lee, J. Y., Chen, P. H., Tsai, J. H., Chen, P. G., & Lee, M. H. (2022). Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf_1-xZr_xO₂FET. 於 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW56633.2022.9889059

Liao, CY, Hsiang, KY, Lou, ZF, Lin, CY, Ray, WC, Chang, FS, Wang, CC, Li, ZX, Tseng, HC, Lee, JY, Chen, PH, Tsai, JH, Chen, PG & Lee, MH 2022, Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf_1-xZr_xO₂FET. 於 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Honolulu, 美国, 2022/06/11. https://doi.org/10.1109/SNW56633.2022.9889059

@inproceedings{f54aa1e39a2d4bea8315fb3a043cd61e,

title = "Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET",

abstract = "The dual-mode (D-mode \& E-mode) GaN MOS-HEMT is achieved simultaneously by a Cascode configuration with Si ferroelectric (FE) FET. Due to hole absence in 2DEG of GaN HEMT, the conventional FE-gate stack on GaN is difficult to obtain FE-hysteresis with dipole switching in FE-layer. The proposed method is a solution to accomplish ferroelectric hysteresis for modulated modes of GaN-FET.",

keywords = "Cascode, E-mode, Ferroelectric, GaN HEMT",

author = "Liao, \{C. Y.\} and Hsiang, \{K. Y.\} and Lou, \{Z. F.\} and Lin, \{C. Y.\} and Ray, \{W. C.\} and Chang, \{F. S.\} and Wang, \{C. C.\} and Li, \{Z. X.\} and Tseng, \{H. C.\} and Lee, \{J. Y.\} and Chen, \{P. H.\} and Tsai, \{J. H.\} and Chen, \{P. G.\} and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 ; Conference date: 11-06-2022 Through 12-06-2022",

year = "2022",

doi = "10.1109/SNW56633.2022.9889059",

language = "English",

series = "2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022",

}

TY - GEN

T1 - Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Lou, Z. F.

AU - Lin, C. Y.

AU - Ray, W. C.

AU - Chang, F. S.

AU - Wang, C. C.

AU - Li, Z. X.

AU - Tseng, H. C.

AU - Lee, J. Y.

AU - Chen, P. H.

AU - Tsai, J. H.

AU - Chen, P. G.

AU - Lee, M. H.

PY - 2022

Y1 - 2022

N2 - The dual-mode (D-mode & E-mode) GaN MOS-HEMT is achieved simultaneously by a Cascode configuration with Si ferroelectric (FE) FET. Due to hole absence in 2DEG of GaN HEMT, the conventional FE-gate stack on GaN is difficult to obtain FE-hysteresis with dipole switching in FE-layer. The proposed method is a solution to accomplish ferroelectric hysteresis for modulated modes of GaN-FET.

AB - The dual-mode (D-mode & E-mode) GaN MOS-HEMT is achieved simultaneously by a Cascode configuration with Si ferroelectric (FE) FET. Due to hole absence in 2DEG of GaN HEMT, the conventional FE-gate stack on GaN is difficult to obtain FE-hysteresis with dipole switching in FE-layer. The proposed method is a solution to accomplish ferroelectric hysteresis for modulated modes of GaN-FET.

KW - Cascode

KW - E-mode

KW - Ferroelectric

KW - GaN HEMT

UR - https://www.scopus.com/pages/publications/85141098868

UR - https://www.scopus.com/pages/publications/85141098868#tab=citedBy

U2 - 10.1109/SNW56633.2022.9889059

DO - 10.1109/SNW56633.2022.9889059

M3 - Conference contribution

AN - SCOPUS:85141098868

T3 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

BT - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Y2 - 11 June 2022 through 12 June 2022

ER -