Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect

M. H. Lee*, S. T. Chang, T. H. Wu, W. N. Tseng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

25 引文 斯高帕斯(Scopus)

摘要

The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.

原文英語
文章編號6012507
頁(從 - 到)1355-1357
頁數3
期刊IEEE Electron Device Letters
32
發行號10
DOIs
出版狀態已發佈 - 2011 十月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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