@article{ade68dd9a66b43faaf9406a903a9922b,
title = "Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect",
abstract = "The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.",
keywords = "Effective mass, subthreshold swing, tunneling",
author = "Lee, {M. H.} and Chang, {S. T.} and Wu, {T. H.} and Tseng, {W. N.}",
note = "Funding Information: Manuscript received June 9, 2011; revised July 21, 2011; accepted July 22, 2011. Date of publication September 7, 2011; date of current version September 28, 2011. This work was supported by the National Science Council under Grant NSC 98-2221-E-003-020-MY3. The review of this letter was arranged by Editor C. Bulucea.",
year = "2011",
month = oct,
doi = "10.1109/LED.2011.2163379",
language = "English",
volume = "32",
pages = "1355--1357",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}