Double nitridation of crystalline ZrO 2 /Al 2 O 3 buffer gate stack with high capacitance, low leakage and improved thermal stability

Jhih Jie Huang, Yi Jen Tsai, Meng Chen Tsai, Min Hung Lee, Miin Jang Chen

研究成果: 雜誌貢獻文章

5 引文 (Scopus)

摘要

The gate dielectric stack composed of crystalline ZrO 2 and Al 2 O 3 buffer layer treated with double nitridation was developed to reduce the capacitance equivalent thickness (CET), leakage current density (J g ), interfacial state density (D it ), and enhance thermal stability as well. A high dielectric constant of the gate stack was provided by the crystalline ZrO 2 with tetragonal/cubic phase. The J g and D it were suppressed by the insertion of the Al 2 O 3 buffer layer treated with remote NH 3 plasma nitridation because of the deactivation of the oxygen vacancies and the well passivation of the Si dangling bonds. A further nitridation using remote N 2 plasma on ZrO 2 was carried out to reduce the CET and J g by the enhancement of the dielectric constant and the deactivation of the grain boundaries and oxygen vacancies. Accordingly, a low CET of 1.09 nm, J g of 3.43 × 10 -5 A/cm 2 , and D it of 3.35 × 10 11 cm -2 eV -1 were achieved in the crystalline ZrO 2 /Al 2 O 3 buffer gate stack treated with the double nitridation. The hysteresis was also minimized significantly by the post-deposition annealing at 800 °C, which is attributed to the enhanced thermal stability. The results indicate that the crystalline high-K dielectrics/buffer layer with double nitridation treatments is a promising gate stack structure beneficial to the sub-nanometer CET scaling in the future.

原文英語
頁(從 - 到)221-227
頁數7
期刊Applied Surface Science
330
DOIs
出版狀態已發佈 - 2015 三月 1

指紋

Nitridation
Buffers
Thermodynamic stability
leakage
thermal stability
Capacitance
buffers
capacitance
Crystalline materials
Buffer layers
deactivation
Oxygen vacancies
permittivity
Permittivity
oxygen
Plasmas
Dangling bonds
passivity
Gate dielectrics
insertion

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

引用此文

Double nitridation of crystalline ZrO 2 /Al 2 O 3 buffer gate stack with high capacitance, low leakage and improved thermal stability . / Huang, Jhih Jie; Tsai, Yi Jen; Tsai, Meng Chen; Lee, Min Hung; Chen, Miin Jang.

於: Applied Surface Science, 卷 330, 01.03.2015, p. 221-227.

研究成果: 雜誌貢獻文章

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abstract = "The gate dielectric stack composed of crystalline ZrO 2 and Al 2 O 3 buffer layer treated with double nitridation was developed to reduce the capacitance equivalent thickness (CET), leakage current density (J g ), interfacial state density (D it ), and enhance thermal stability as well. A high dielectric constant of the gate stack was provided by the crystalline ZrO 2 with tetragonal/cubic phase. The J g and D it were suppressed by the insertion of the Al 2 O 3 buffer layer treated with remote NH 3 plasma nitridation because of the deactivation of the oxygen vacancies and the well passivation of the Si dangling bonds. A further nitridation using remote N 2 plasma on ZrO 2 was carried out to reduce the CET and J g by the enhancement of the dielectric constant and the deactivation of the grain boundaries and oxygen vacancies. Accordingly, a low CET of 1.09 nm, J g of 3.43 × 10 -5 A/cm 2 , and D it of 3.35 × 10 11 cm -2 eV -1 were achieved in the crystalline ZrO 2 /Al 2 O 3 buffer gate stack treated with the double nitridation. The hysteresis was also minimized significantly by the post-deposition annealing at 800 °C, which is attributed to the enhanced thermal stability. The results indicate that the crystalline high-K dielectrics/buffer layer with double nitridation treatments is a promising gate stack structure beneficial to the sub-nanometer CET scaling in the future.",
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AU - Tsai, Yi Jen

AU - Tsai, Meng Chen

AU - Lee, Min Hung

AU - Chen, Miin Jang

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N2 - The gate dielectric stack composed of crystalline ZrO 2 and Al 2 O 3 buffer layer treated with double nitridation was developed to reduce the capacitance equivalent thickness (CET), leakage current density (J g ), interfacial state density (D it ), and enhance thermal stability as well. A high dielectric constant of the gate stack was provided by the crystalline ZrO 2 with tetragonal/cubic phase. The J g and D it were suppressed by the insertion of the Al 2 O 3 buffer layer treated with remote NH 3 plasma nitridation because of the deactivation of the oxygen vacancies and the well passivation of the Si dangling bonds. A further nitridation using remote N 2 plasma on ZrO 2 was carried out to reduce the CET and J g by the enhancement of the dielectric constant and the deactivation of the grain boundaries and oxygen vacancies. Accordingly, a low CET of 1.09 nm, J g of 3.43 × 10 -5 A/cm 2 , and D it of 3.35 × 10 11 cm -2 eV -1 were achieved in the crystalline ZrO 2 /Al 2 O 3 buffer gate stack treated with the double nitridation. The hysteresis was also minimized significantly by the post-deposition annealing at 800 °C, which is attributed to the enhanced thermal stability. The results indicate that the crystalline high-K dielectrics/buffer layer with double nitridation treatments is a promising gate stack structure beneficial to the sub-nanometer CET scaling in the future.

AB - The gate dielectric stack composed of crystalline ZrO 2 and Al 2 O 3 buffer layer treated with double nitridation was developed to reduce the capacitance equivalent thickness (CET), leakage current density (J g ), interfacial state density (D it ), and enhance thermal stability as well. A high dielectric constant of the gate stack was provided by the crystalline ZrO 2 with tetragonal/cubic phase. The J g and D it were suppressed by the insertion of the Al 2 O 3 buffer layer treated with remote NH 3 plasma nitridation because of the deactivation of the oxygen vacancies and the well passivation of the Si dangling bonds. A further nitridation using remote N 2 plasma on ZrO 2 was carried out to reduce the CET and J g by the enhancement of the dielectric constant and the deactivation of the grain boundaries and oxygen vacancies. Accordingly, a low CET of 1.09 nm, J g of 3.43 × 10 -5 A/cm 2 , and D it of 3.35 × 10 11 cm -2 eV -1 were achieved in the crystalline ZrO 2 /Al 2 O 3 buffer gate stack treated with the double nitridation. The hysteresis was also minimized significantly by the post-deposition annealing at 800 °C, which is attributed to the enhanced thermal stability. The results indicate that the crystalline high-K dielectrics/buffer layer with double nitridation treatments is a promising gate stack structure beneficial to the sub-nanometer CET scaling in the future.

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