Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

K. T. Chen, C. Lo, Y. Y. Lin, C. Y. Chueh, C. Chang, G. Y. Siang, Y. J. Tseng, Y. J. Yang, F. C. Hsieh, S. H. Chang, H. Liang, S. H. Chiang, J. H. Liu, Y. D. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P. J. Tzeng, M. H. Liao, S. T. ChangY. Y. Tseng, M. H. Lee*


研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)


The 3D double layer Ω-type FETs with ferroelectric HfZrO2 gate served for one-transistor (1T) architecture is demonstrated and studied for memory reliability. The high endurance is presented more than 106 cycles P/E with 4V. Multi-domain model integrated with TCAD is proposed by adding a coupling coefficient for the polarization gradient term of the free energy, and calculating for nanosheet GAA-FETs. The polarization orientation is assigned randomly by Gaussian distribution into individual domain for multi-dimensional 3D device simulation. The data retention is degraded due to depolarization field occurrence at the corner by modeling results. The feasible structure paves the candidate for emerging memory applications.

主出版物標題2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
出版狀態已發佈 - 2020 四月
事件2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, 美国
持續時間: 2020 四月 282020 五月 30


名字IEEE International Reliability Physics Symposium Proceedings


會議2020 IEEE International Reliability Physics Symposium, IRPS 2020
城市Virtual, Online

ASJC Scopus subject areas

  • 工程 (全部)


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