Doping effects on the Raman spectra of silicon nanowires

Chao Yu Meng*, Jui Lin Chen, Si Chen Lee, Chih Ta Chia

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)

摘要

Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si.

原文英語
文章編號245309
期刊Physical Review B - Condensed Matter and Materials Physics
73
發行號24
DOIs
出版狀態已發佈 - 2006

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學

指紋

深入研究「Doping effects on the Raman spectra of silicon nanowires」主題。共同形成了獨特的指紋。

引用此