Doping and charge-carrier density effects in the cuprate superconductors

David B. Tanner*, Young Duck Yoon, Axel Zibold, H. L. Liu, Manuel A. Quijada, S. W. Moore, John B. Graybeal, Beom Hoan O, John T. Markert, R. J. Kelley, Marshall Onellion, J. H. Cho

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

9 引文 斯高帕斯(Scopus)

摘要

The undoped phases of the copper-oxide materials are antiferromagnetic insulators, with a gap of 1.5 - 2 eV. Infrared spectroscopy of these compounds reveals weak absorption, possibly of magnetic origin, in this gap. When the materials are doped, oscillator strength is removed from the charge transfer band. This oscillator strength moves to low frequency, to become midinfrared and free carrier absorption. A systematic study of the electron-doped Nd 2- xCe xCuO 4-y system reveals that the growth of low-frequency oscillator strength with doping concentration x is twice as rapid as in the case of hole-doped materials, such as La 2-xSr xCuO 4. This behavior is in accord with electronic structure models based on the 3-band Hubbard model and inconsistent with one-band behavior. However, an anomaly occurs for samples which are doped to the critical concentration for superconductivity; these have a greater than expected free-carrier concentration and weaker charge-transfer bands.

原文英語
主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
編輯I. Bozovic, D. van der Marel
頁面13-23
頁數11
版本1/-
出版狀態已發佈 - 1996
對外發佈
事件Spectroscopic Studies of Superconductors. Part 2 (of 2) - San Jose, CA, USA, 臺灣
持續時間: 1996 1月 291996 2月 1

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
號碼1/-
2696

會議

會議Spectroscopic Studies of Superconductors. Part 2 (of 2)
國家/地區臺灣
城市San Jose, CA, USA
期間1996/01/291996/02/01

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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