Direct measurement of interfacial structure in epitaxial Gd 2O3 on GaAs (0 0 1) using scanning tunneling microscopy

Y. P. Chiu, M. C. Shih, B. C. Huang, J. Y. Shen, M. L. Huang, W. C. Lee, P. Chang, T. H. Chiang, M. Hong, J. Kwo

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

The epitaxial growth of Gd2O3 on GaAs (0 0 1) has given a low interfacial density of states, resulting in the demonstration of the first inversion-channel GaAs metal-oxide-semiconductor field-effect transistor. Motivated by the significance of this discovery, in this work, cross-sectional scanning tunneling microscopy is employed herein to obtain precise structural and electronic information on these epitaxial films and interfaces. At the interface, the interfacial stacking of Gd2O3 films is directly correlated with the stacking sequence of the substrate GaAs. Additionally, from the local electronic states across the gate oxides, the spatial extent of the GaAs wavefunctions into the oxide dielectric may suggest a minimum Gd2O3 thickness to be of bulk properties.

原文英語
頁(從 - 到)1058-1060
頁數3
期刊Microelectronic Engineering
88
發行號7
DOIs
出版狀態已發佈 - 2011 七月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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