Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes

Chun Ying Huang, Fu Fan Hsu, Chia Ling Wu, Ming Liang Chen, Ping Hung Tsai, Sian Rong Tong, Ting Wei Yeh, Ya Ju Lee

研究成果: 雜誌貢獻文章

2 引文 (Scopus)

摘要

Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.

原文英語
文章編號075103
期刊Applied Physics Express
11
發行號7
DOIs
出版狀態已發佈 - 2018 七月 1

指紋

Nanorods
Graphene
nanorods
Light emitting diodes
graphene
light emitting diodes
Rapid thermal annealing
carrier injection
Amorphous carbon
Electroluminescence
electroluminescence
Nickel
nickel
Fabrication
fabrication
annealing
carbon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes. / Huang, Chun Ying; Hsu, Fu Fan; Wu, Chia Ling; Chen, Ming Liang; Tsai, Ping Hung; Tong, Sian Rong; Yeh, Ting Wei; Lee, Ya Ju.

於: Applied Physics Express, 卷 11, 編號 7, 075103, 01.07.2018.

研究成果: 雜誌貢獻文章

Huang, Chun Ying ; Hsu, Fu Fan ; Wu, Chia Ling ; Chen, Ming Liang ; Tsai, Ping Hung ; Tong, Sian Rong ; Yeh, Ting Wei ; Lee, Ya Ju. / Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes. 於: Applied Physics Express. 2018 ; 卷 11, 編號 7.
@article{2dbbf4d67d7a436dbd75b416741c26cb,
title = "Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes",
abstract = "Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.",
author = "Huang, {Chun Ying} and Hsu, {Fu Fan} and Wu, {Chia Ling} and Chen, {Ming Liang} and Tsai, {Ping Hung} and Tong, {Sian Rong} and Yeh, {Ting Wei} and Lee, {Ya Ju}",
year = "2018",
month = "7",
day = "1",
doi = "10.7567/APEX.11.075103",
language = "English",
volume = "11",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "7",

}

TY - JOUR

T1 - Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes

AU - Huang, Chun Ying

AU - Hsu, Fu Fan

AU - Wu, Chia Ling

AU - Chen, Ming Liang

AU - Tsai, Ping Hung

AU - Tong, Sian Rong

AU - Yeh, Ting Wei

AU - Lee, Ya Ju

PY - 2018/7/1

Y1 - 2018/7/1

N2 - Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.

AB - Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.

UR - http://www.scopus.com/inward/record.url?scp=85049069520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049069520&partnerID=8YFLogxK

U2 - 10.7567/APEX.11.075103

DO - 10.7567/APEX.11.075103

M3 - Article

AN - SCOPUS:85049069520

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 7

M1 - 075103

ER -