Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes

Chun Ying Huang, Fu Fan Hsu, Chia Ling Wu, Ming Liang Chen, Ping Hung Tsai, Sian Rong Tong, Ting Wei Yeh, Ya Ju Lee

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

摘要

Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.

原文英語
文章編號075103
期刊Applied Physics Express
11
發行號7
DOIs
出版狀態已發佈 - 2018 七月 1

    指紋

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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