Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

Chun Ying Huang, Ya Ju Lee, Tai Yuan Lin, Shao Lun Chang, Jan Tian Lian, Hsiu Mei Lin, Nie Chuan Chen, Ying Jay Yang

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)


In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73 × 1017 cm-3, a high mobility of 210 cm2/Vs, and a low resistivity of 0.079 Ωcm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.

頁(從 - 到)805-808
期刊Optics Letters
出版狀態已發佈 - 2014 2月 15

ASJC Scopus subject areas

  • 原子與分子物理與光學


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