Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells

Ya Ju Lee*, Yung Chi Yao, Chia Hao Yang

*此作品的通信作者

    研究成果: 書貢獻/報告類型會議論文篇章

    摘要

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

    原文英語
    主出版物標題Conference on Lasers and Electro Optics, CLEO
    主出版物子標題Applications and Technology, CLEO_AT 2013
    頁面JW2A.83
    出版狀態已發佈 - 2013 十一月 19
    事件CLEO: Applications and Technology, CLEO_AT 2013 - San Jose, CA, 美国
    持續時間: 2013 六月 92013 六月 14

    出版系列

    名字CLEO: Applications and Technology, CLEO_AT 2013

    其他

    其他CLEO: Applications and Technology, CLEO_AT 2013
    國家/地區美国
    城市San Jose, CA
    期間2013/06/092013/06/14

    ASJC Scopus subject areas

    • 電腦網路與通信
    • 電氣與電子工程
    • 電子、光磁材料
    • 原子與分子物理與光學

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