Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells

Ya Ju Lee; Yung Chi Yao; Chia Hao Yang

doi:10.1364/cleo_at.2013.jw2a.83

Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells

Ya Ju Lee
, Yung Chi Yao
, Chia Hao Yang

光電工程研究所

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

原文	英語
主出版物標題	2013 Conference on Lasers and Electro-Optics, CLEO 2013
發行者	IEEE Computer Society
ISBN（列印）	9781557529725
DOIs	https://doi.org/10.1364/cleo_at.2013.jw2a.83
出版狀態	已發佈 - 2013
事件	2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, 美国持續時間: 2013 6月 9 → 2013 6月 14

出版系列

名字	2013 Conference on Lasers and Electro-Optics, CLEO 2013

其他

其他	2013 Conference on Lasers and Electro-Optics, CLEO 2013
國家/地區	美国
城市	San Jose, CA
期間	2013/06/09 → 2013/06/14

UN SDG

此研究成果有助於以下永續發展目標

SDG 7 可負擔的潔淨能源

ASJC Scopus subject areas

電子、光磁材料

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10.1364/cleo_at.2013.jw2a.83

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引用此

Lee, YJ, Yao, YC & Yang, CH 2013, Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells. 於 2013 Conference on Lasers and Electro-Optics, CLEO 2013., 6834123, 2013 Conference on Lasers and Electro-Optics, CLEO 2013, IEEE Computer Society, 2013 Conference on Lasers and Electro-Optics, CLEO 2013, San Jose, CA, 美国, 2013/06/09. https://doi.org/10.1364/cleo_at.2013.jw2a.83

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title = "Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells",

abstract = "A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.",

author = "Lee, \{Ya Ju\} and Yao, \{Yung Chi\} and Yang, \{Chia Hao\}",

year = "2013",

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publisher = "IEEE Computer Society",

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N2 - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

AB - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

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U2 - 10.1364/cleo_at.2013.jw2a.83

DO - 10.1364/cleo_at.2013.jw2a.83

M3 - Conference contribution

AN - SCOPUS:84903777466

SN - 9781557529725

T3 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

BT - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

PB - IEEE Computer Society

T2 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells

摘要

出版系列

其他

UN SDG

ASJC Scopus subject areas

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