The 3D vertical ferroelectric tunneling junction (FTJ) of bilayer antiferroelectric (AFE) Hf1-xZrxO2(HZO) and Al2O3 has been demonstrated for NAND-compatible feasibility. A bilayer-type FTJ is explored for the designs of the dielectric interlayer Al2O3 0 nm to 4 nm and the ferroelectric type, while the current mechanism is revealed. The multilevel AFE-FTJ is exhibited for both the Program and Erase operations and realizes a synaptic device. High-density emerging memory and computing-in-memory (CiM) are in high demanded for the future era and can be feasible by the proposed vertical FTJ.
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