Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

Y. J. Lee; P. C. Lin; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1063/1.2722672

Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

Y. J. Lee^*, P. C. Lin, T. C. Lu, H. C. Kuo, S. C. Wang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

43 引文斯高帕斯（Scopus）

摘要

An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 Im/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

原文	英語
文章編號	161115
期刊	Applied Physics Letters
卷	90
發行號	16
DOIs	https://doi.org/10.1063/1.2722672
出版狀態	已發佈 - 2007
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

存取文件

10.1063/1.2722672

其它文件與鏈接

引用此

@article{3a808e7ec6294818a7880335b6d0aed2,

title = "Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes",

abstract = "An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 Im/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.",

author = "Lee, {Y. J.} and Lin, {P. C.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",

note = "Funding Information: The authors would like to thank T. C. Hsu and M. H. Hsieh of Epistar and Shawn-Yu Lin of the Rensselaer Polytechnic Institute for useful discussion and technical support. This work was supported by the MOE ATU program and in part by the National Science Council NSC 95-2120-M-009-008, NSC 95-2752-E-009-007-PAE, and NSC 95-2221-E-009-282, Republic of China.",

year = "2007",

doi = "10.1063/1.2722672",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

AU - Lee, Y. J.

AU - Lin, P. C.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

N1 - Funding Information: The authors would like to thank T. C. Hsu and M. H. Hsieh of Epistar and Shawn-Yu Lin of the Rensselaer Polytechnic Institute for useful discussion and technical support. This work was supported by the MOE ATU program and in part by the National Science Council NSC 95-2120-M-009-008, NSC 95-2752-E-009-007-PAE, and NSC 95-2221-E-009-282, Republic of China.

PY - 2007

Y1 - 2007

N2 - An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 Im/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

AB - An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 Im/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

UR - http://www.scopus.com/inward/record.url?scp=34247350015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247350015&partnerID=8YFLogxK

U2 - 10.1063/1.2722672

DO - 10.1063/1.2722672

M3 - Article

AN - SCOPUS:34247350015

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161115

ER -

Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此