Device modeling of ferroelectric memory field-effect transistor (FeMFET)

Hang Ting Lue*, Chien Jang Wu, Tseung Yuen Tseng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

146 引文 斯高帕斯(Scopus)

摘要

A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented. Two important structures such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMISFET) are considered. A new analytic expression for the relation of polarization versus electric field (P-E) is proposed to describe the nonsaturated hysteresis loop of the ferroelectric material. In order to provide a more accurate simulation, we incorporate the combined effects of the nonsaturated polarization of ferroelectric layers and the nonuniform distributions of electric field and charge along the channel. We also discuss the possible nonideal effects due to the fixed charges, charge injection, and short channel. The present theoretical work provides some new design rules for improving the performance of FeMFETs.

原文英語
頁(從 - 到)1790-1798
頁數9
期刊IEEE Transactions on Electron Devices
49
發行號10
DOIs
出版狀態已發佈 - 2002 10月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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