Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

Hang Ting Lue*, Chien Jang Wu, Tseung Yuen Tseng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

54 引文 斯高帕斯(Scopus)

摘要

An improved theoretical analysis on the electrical characteristics of ferroelectric memory field-effect transistor (FeMFET) is given. First, we propose a new analytical expression for the polarization versus electric field (P-E) for the ferroelectric material. It is determined by one parameter and explicitly includes both the saturated and nonsaturated hysteresis loops. Using this expression, we then examine the operational properties for two practical devices such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) as well. A double integral also has been used, in order to include the possible effects due to the nonuniform field and charge distribution along the channel of the device, to calculate the drain current of FeMFET. By using the relevant material parameters close to the (Bi, La)4Ti3O12 (BLT) system, accurate analyses on the capacitors and FeMFET's at various applied biases are made. We also address the issues of depolarization field and retention time about such a device.

原文英語
頁(從 - 到)5-14
頁數10
期刊IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
50
發行號1
DOIs
出版狀態已發佈 - 2003 1月
對外發佈

ASJC Scopus subject areas

  • 儀器
  • 聲學與超音波
  • 電氣與電子工程

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