Development of composite vertical wet etching for silicon material

Mao Jung Huang; Chun Ming Chang; Nien Nan Chu; Yu Hsiang Tang; Chii Rong Yang

doi:10.1109/NEMS.2014.6908875

Development of composite vertical wet etching for silicon material

Mao Jung Huang^*, Chun Ming Chang, Nien Nan Chu, Yu Hsiang Tang, Chii Rong Yang

^*此作品的通信作者

機電工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.

原文	英語
主出版物標題	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	564-567
頁數	4
ISBN（電子）	9781479947270
DOIs	https://doi.org/10.1109/NEMS.2014.6908875
出版狀態	已發佈 - 2014 9月 23
事件	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, 美国持續時間: 2014 4月 13 → 2014 4月 16

出版系列

名字	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

其他

其他	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
國家/地區	美国
城市	Waikiki Beach
期間	2014/04/13 → 2014/04/16

ASJC Scopus subject areas

控制與系統工程
電氣與電子工程

存取文件

10.1109/NEMS.2014.6908875

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引用此

Huang, M. J., Chang, C. M., Chu, N. N., Tang, Y. H., & Yang, C. R. (2014). Development of composite vertical wet etching for silicon material. 於 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 (頁 564-567). 文章 6908875 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2014.6908875

Development of composite vertical wet etching for silicon material. / Huang, Mao Jung; Chang, Chun Ming; Chu, Nien Nan 等.
9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 564-567 6908875 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Huang, MJ, Chang, CM, Chu, NN, Tang, YH & Yang, CR 2014, Development of composite vertical wet etching for silicon material. 於 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014., 6908875, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Institute of Electrical and Electronics Engineers Inc., 頁 564-567, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Waikiki Beach, 美国, 2014/04/13. https://doi.org/10.1109/NEMS.2014.6908875

Huang MJ, Chang CM, Chu NN, Tang YH, Yang CR. Development of composite vertical wet etching for silicon material. 於 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 564-567. 6908875. (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). doi: 10.1109/NEMS.2014.6908875

Huang, Mao Jung ; Chang, Chun Ming ; Chu, Nien Nan 等. / Development of composite vertical wet etching for silicon material. 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 頁 564-567 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

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title = "Development of composite vertical wet etching for silicon material",

abstract = "In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.",

keywords = "Bulk silicon micromachining, Electrochemical etching, Metal assisted chemical etching",

author = "Huang, {Mao Jung} and Chang, {Chun Ming} and Chu, {Nien Nan} and Tang, {Yu Hsiang} and Yang, {Chii Rong}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 ; Conference date: 13-04-2014 Through 16-04-2014",

year = "2014",

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doi = "10.1109/NEMS.2014.6908875",

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series = "9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014",

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T1 - Development of composite vertical wet etching for silicon material

AU - Huang, Mao Jung

AU - Chang, Chun Ming

AU - Chu, Nien Nan

AU - Tang, Yu Hsiang

AU - Yang, Chii Rong

PY - 2014/9/23

Y1 - 2014/9/23

N2 - In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.

AB - In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.

KW - Bulk silicon micromachining

KW - Electrochemical etching

KW - Metal assisted chemical etching

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BT - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Development of composite vertical wet etching for silicon material

摘要

出版系列

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