TY - JOUR
T1 - Determination of junction temperature in InGaN and AlGaInP light-emitting diodes
AU - Lee, Ya Ju
AU - Lee, Chia Jung
AU - Chen, Chih Hao
N1 - Funding Information:
Manuscript received February 9, 2010; revised April 19, 2010; accepted May 13, 2010. Date of current version August 17, 2010. This work was supported by the National Science Council of the Republic of China in Taiwan, under Contract NSC-98-2112-M003-001-MY2. Y.-J. Lee and C.-J. Lee are with the Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan (e-mail: [email protected]; [email protected]). C.-H. Chen is with Epistar Corporation, Ltd., Hsinchu 300, Taiwan (e-mail: [email protected]). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/JQE.2010.2050866
PY - 2010
Y1 - 2010
N2 - The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.
AB - The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.
KW - Junction temperature
KW - Light-emitting diode (LED)
KW - Thermal resistance
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U2 - 10.1109/JQE.2010.2050866
DO - 10.1109/JQE.2010.2050866
M3 - Article
AN - SCOPUS:77956511903
SN - 0018-9197
VL - 46
SP - 1450
EP - 1455
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 10
ER -