Determination of junction temperature in InGaN and AlGaInP light-emitting diodes

Ya Ju Lee; Chia Jung Lee; Chih Hao Chen

doi:10.1109/JQE.2010.2050866

Determination of junction temperature in InGaN and AlGaInP light-emitting diodes

Ya Ju Lee, Chia Jung Lee, Chih Hao Chen

研究成果: 雜誌貢獻 › 文章 › 同行評審

22 引文斯高帕斯（Scopus）

摘要

The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.

原文	英語
頁（從 - 到）	1450-1455
頁數	6
期刊	IEEE Journal of Quantum Electronics
卷	46
發行號	10
DOIs	https://doi.org/10.1109/JQE.2010.2050866
出版狀態	已發佈 - 2010 九月 17

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2010.2050866

指紋深入研究「Determination of junction temperature in InGaN and AlGaInP light-emitting diodes」主題。共同形成了獨特的指紋。

引用此

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