摘要
The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.
原文 | 英語 |
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頁(從 - 到) | 1450-1455 |
頁數 | 6 |
期刊 | IEEE Journal of Quantum Electronics |
卷 | 46 |
發行號 | 10 |
DOIs | |
出版狀態 | 已發佈 - 2010 九月 17 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering