@article{d897233685bd4db09f3522c5b28a9ab7,
title = "Determination of junction temperature in InGaN and AlGaInP light-emitting diodes",
abstract = "The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.",
keywords = "Junction temperature, Light-emitting diode (LED), Thermal resistance",
author = "Lee, {Ya Ju} and Lee, {Chia Jung} and Chen, {Chih Hao}",
note = "Funding Information: Manuscript received February 9, 2010; revised April 19, 2010; accepted May 13, 2010. Date of current version August 17, 2010. This work was supported by the National Science Council of the Republic of China in Taiwan, under Contract NSC-98-2112-M003-001-MY2. Y.-J. Lee and C.-J. Lee are with the Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan (e-mail: yajulee@ntnu.edu.tw; maikuraki25@gmail.com). C.-H. Chen is with Epistar Corporation, Ltd., Hsinchu 300, Taiwan (e-mail: 697480308@ntnu.edu.tw). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/JQE.2010.2050866",
year = "2010",
doi = "10.1109/JQE.2010.2050866",
language = "English",
volume = "46",
pages = "1450--1455",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}