TY - GEN
T1 - Design of ESD protection for RF CMOS power amplifier with inductor in matching network
AU - Tsai, Shiang Yu
AU - Lin, Chun Yu
AU - Chu, Li Wei
AU - Ker, Ming Dou
PY - 2012
Y1 - 2012
N2 - Due to the potential for mass production, CMOS technologies have been widely used to implement radio-frequency integrated circuits (RF ICs). Electrostatic discharge (ESD), which is one of the most important reliability issues in CMOS technologies, must be considered in RF ICs. In this work, an on-chip ESD protection design for RF power amplifier (PA) was presented. The ESD protection design consisted of an inductor in the matching network of PA. The PA with this ESD protection had been designed and fabricated in a 65-nm CMOS process. The ESD-protected PA can sustain over 4-kV human-body-mode (HBM) ESD stress, while the unprotected PA was degraded after 1-kV HBM ESD stress.
AB - Due to the potential for mass production, CMOS technologies have been widely used to implement radio-frequency integrated circuits (RF ICs). Electrostatic discharge (ESD), which is one of the most important reliability issues in CMOS technologies, must be considered in RF ICs. In this work, an on-chip ESD protection design for RF power amplifier (PA) was presented. The ESD protection design consisted of an inductor in the matching network of PA. The PA with this ESD protection had been designed and fabricated in a 65-nm CMOS process. The ESD-protected PA can sustain over 4-kV human-body-mode (HBM) ESD stress, while the unprotected PA was degraded after 1-kV HBM ESD stress.
UR - http://www.scopus.com/inward/record.url?scp=84874136545&partnerID=8YFLogxK
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U2 - 10.1109/APCCAS.2012.6419073
DO - 10.1109/APCCAS.2012.6419073
M3 - Conference contribution
AN - SCOPUS:84874136545
SN - 9781457717291
T3 - IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS
SP - 467
EP - 470
BT - 2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
T2 - 2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
Y2 - 2 December 2012 through 5 December 2012
ER -