Design of ESD protection for RF CMOS power amplifier with inductor in matching network

Shiang Yu Tsai*, Chun-Yu Lin, Li Wei Chu, Ming Dou Ker

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

4 引文 斯高帕斯(Scopus)

摘要

Due to the potential for mass production, CMOS technologies have been widely used to implement radio-frequency integrated circuits (RF ICs). Electrostatic discharge (ESD), which is one of the most important reliability issues in CMOS technologies, must be considered in RF ICs. In this work, an on-chip ESD protection design for RF power amplifier (PA) was presented. The ESD protection design consisted of an inductor in the matching network of PA. The PA with this ESD protection had been designed and fabricated in a 65-nm CMOS process. The ESD-protected PA can sustain over 4-kV human-body-mode (HBM) ESD stress, while the unprotected PA was degraded after 1-kV HBM ESD stress.

原文英語
主出版物標題2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
頁面467-470
頁數4
DOIs
出版狀態已發佈 - 2012 十二月 1
事件2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012 - Kaohsiung, 臺灣
持續時間: 2012 十二月 22012 十二月 5

出版系列

名字IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

其他

其他2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
國家/地區臺灣
城市Kaohsiung
期間2012/12/022012/12/05

ASJC Scopus subject areas

  • 電氣與電子工程

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