Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process

Chun Yu Lin; Rong Kun Chang

doi:10.1109/TED.2015.2450225

Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process

Chun Yu Lin, Rong Kun Chang

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

19 引文斯高帕斯（Scopus）

摘要

An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ∼ 100× 100~μ m². The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.

原文	英語
文章編號	7163314
頁（從 - 到）	2824-2829
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	62
發行號	9
DOIs	https://doi.org/10.1109/TED.2015.2450225
出版狀態	已發佈 - 2015 9月 1

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TED.2015.2450225

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title = "Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process",

abstract = "An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ∼ 100× 100~μ m2. The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.",

keywords = "CMOS, K-band, Ka-band, electrostatic discharge (ESD), silicon-controlled rectifier (SCR).",

author = "Lin, {Chun Yu} and Chang, {Rong Kun}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

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AU - Chang, Rong Kun

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KW - K-band

KW - Ka-band

KW - electrostatic discharge (ESD)

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Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process

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