Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process

Chun Yu Lin, Rong Kun Chang

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ∼ 100× 100~μ m2. The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.

原文英語
文章編號7163314
頁(從 - 到)2824-2829
頁數6
期刊IEEE Transactions on Electron Devices
62
發行號9
DOIs
出版狀態已發佈 - 2015 九月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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