Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

Chun Yu Lin; Yan Lian Chiu

doi:10.1016/j.sse.2016.07.029

Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

Chun Yu Lin^*
, Yan Lian Chiu

^*此作品的通信作者

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × V_DD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with V_DD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × V_DD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × V_DD-tolerant stacked-device output driver to improve its ESD robustness.

原文	英語
頁（從 - 到）	28-34
頁數	7
期刊	Solid-State Electronics
卷	124
DOIs	https://doi.org/10.1016/j.sse.2016.07.029
出版狀態	已發佈 - 2016 10月 1

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/j.sse.2016.07.029

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@article{f96ccd1362354e57a1bdc98a74d75c27,

title = "Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology",

abstract = "This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.",

keywords = "Electrostatic discharge (ESD), Output driver, Silicon-controlled rectifier (SCR)",

author = "Lin, \{Chun Yu\} and Chiu, \{Yan Lian\}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = oct,

day = "1",

doi = "10.1016/j.sse.2016.07.029",

language = "English",

volume = "124",

pages = "28--34",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

AU - Lin, Chun Yu

AU - Chiu, Yan Lian

PY - 2016/10/1

Y1 - 2016/10/1

N2 - This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.

AB - This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.

KW - Electrostatic discharge (ESD)

KW - Output driver

KW - Silicon-controlled rectifier (SCR)

UR - https://www.scopus.com/pages/publications/84982803746

UR - https://www.scopus.com/pages/publications/84982803746#tab=citedBy

U2 - 10.1016/j.sse.2016.07.029

DO - 10.1016/j.sse.2016.07.029

M3 - Article

AN - SCOPUS:84982803746

SN - 0038-1101

VL - 124

SP - 28

EP - 34

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

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ASJC Scopus subject areas

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