摘要
This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.
原文 | 英語 |
---|---|
頁(從 - 到) | 28-34 |
頁數 | 7 |
期刊 | Solid-State Electronics |
卷 | 124 |
DOIs | |
出版狀態 | 已發佈 - 2016 10月 1 |
ASJC Scopus subject areas
- 電子、光磁材料
- 凝聚態物理學
- 電氣與電子工程
- 材料化學