Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

Chun Yu Lin*, Yan Lian Chiu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.

原文英語
頁(從 - 到)28-34
頁數7
期刊Solid-State Electronics
124
DOIs
出版狀態已發佈 - 2016 十月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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