@article{f96ccd1362354e57a1bdc98a74d75c27,
title = "Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology",
abstract = "This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.",
keywords = "Electrostatic discharge (ESD), Output driver, Silicon-controlled rectifier (SCR)",
author = "Lin, {Chun Yu} and Chiu, {Yan Lian}",
note = "Funding Information: This work was supported in part by Ministry of Science and Technology, Taiwan , under Contracts MOST 104-2220-E-003-001 and MOST 105-2622-E-003-001-CC2 , and in part by Biomedical Electronics Translational Research Center , National Chiao Tung University, Taiwan . The authors would like to thank National Chip Implementation Center (CIC), Taiwan, for the support of chip fabrication. The authors would also like to thank Prof. Ming-Dou Ker and his research group in National Chiao Tung University, Taiwan, for their great help during measurement. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",
year = "2016",
month = oct,
day = "1",
doi = "10.1016/j.sse.2016.07.029",
language = "English",
volume = "124",
pages = "28--34",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
}