@inproceedings{d30afef775504cecbd173d375a8a75a9,
title = "Design of a 9-25 GHz broadband low noise amplifier using 0.15-μm GaAs HEMT process",
abstract = "A 9-25 GHz low noise amplifier (LNA) is design and implemented in 0.15-μm GaAs HEMT process. Utilizing a resistive feed-back technique, the two-stage common source LNA achieves a broadband and flat frequency response. The measured small-signal gain is 20 ± 1.5 dB from 9-25 GHz and the 3-dB bandwidth is 94 %. With the feature of the resistive feed-back technique, the LNA achieves a 1-dB bandwidth up to 53.3 % from 11 to 19 GHz with flat gain frequency response of 21 ± 0.5 dB. The noise figure is 3.5 ± 0.5 from 9 to 21 GHz. The chip size is only 1.5 mm x 1 mm.",
keywords = "broadband, GaAs, Low noise amplifier (LNA), Monolithic microwave integrated circuit (MMIC), pHEMT",
author = "Tsai, {Jeng Han} and Lin, {Ji Yang} and Ding, {Kun Yao}",
year = "2012",
doi = "10.1109/ICMMT.2012.6230368",
language = "English",
isbn = "9781467321839",
series = "2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings",
pages = "1654--1657",
booktitle = "2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings",
note = "2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 ; Conference date: 05-05-2012 Through 08-05-2012",
}