Design of a 9-25 GHz broadband low noise amplifier using 0.15-μm GaAs HEMT process

Jeng-Han Tsai*, Ji Yang Lin, Kun Yao Ding

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

4 引文 斯高帕斯(Scopus)

摘要

A 9-25 GHz low noise amplifier (LNA) is design and implemented in 0.15-μm GaAs HEMT process. Utilizing a resistive feed-back technique, the two-stage common source LNA achieves a broadband and flat frequency response. The measured small-signal gain is 20 ± 1.5 dB from 9-25 GHz and the 3-dB bandwidth is 94 %. With the feature of the resistive feed-back technique, the LNA achieves a 1-dB bandwidth up to 53.3 % from 11 to 19 GHz with flat gain frequency response of 21 ± 0.5 dB. The noise figure is 3.5 ± 0.5 from 9 to 21 GHz. The chip size is only 1.5 mm x 1 mm.

原文英語
主出版物標題2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
頁面1654-1657
頁數4
DOIs
出版狀態已發佈 - 2012 八月 10
事件2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Shenzhen, 中国
持續時間: 2012 五月 52012 五月 8

出版系列

名字2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
5

其他

其他2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
國家/地區中国
城市Shenzhen
期間2012/05/052012/05/08

ASJC Scopus subject areas

  • 電氣與電子工程

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