Design of 2.4-GHz T/R switch with embedded ESD protection devices in CMOS process

Chun Yu Lin*, Rui Hong Liu, Ming Dou Ker


研究成果: 雜誌貢獻期刊論文同行評審


As CMOS processes advanced, the integration of radio-frequency (RF) integrated circuits was increasing. In order to protect the fully-integrated RF transceiver from electrostatic discharge (ESD) damage, the transmit/receive (T/R) switch of transceiver frond-end should be carefully designed to bypass the ESD current. This work presented a technique of embedded ESD protection device to enhance the ESD capability of T/R switch. The embedded ESD protection devices of diodes and silicon-controlled rectifier (SCR) are generated between the transistors in T/R switch without using additional ESD protection device. The design procedure of RF circuits without ESD protection device can be simplified. The test circuits of 2.4-GHz transceiver frond-end with T/R switch, PA, and LNA have been integrated and implemented in nanoscale CMOS process to test their performances during RF operations and ESD stresses. The test results confirm that the embedded ESD protection devices can provide sufficient ESD protection capability and it is free from degrading circuit performances.

頁(從 - 到)258-266
期刊Microelectronics Reliability
出版狀態已發佈 - 2017 11月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 安全、風險、可靠性和品質
  • 表面、塗料和薄膜
  • 原子與分子物理與光學
  • 電氣與電子工程


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