Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy

T. S. Lay*, S. C. Chang, G. J. Din, C. C. Yeh, W. H. Hung, W. G. Lee, J. Kwo, M. Hong

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

The depth profile of the HfO2 Si interface grown by molecular beam epitaxy (MBE) has been investigated by high-resolution x-ray photoelectron spectroscopy using synchrotron radiation beam and low energy Ar+ sputtering. At the interfacial layer, the Hf 4f spectra show a Hf silicide state without a Hf silicate signal. The O 1s and Si 2p spectra show weakly two silicon oxidation states of SiO and SiO2. The data suggest an inward reaction of the Hf and O species into the Si substrate during the MBE growth. The valence band offset (Δ EV) of ∼3.5 eV is obtained for the HfO2 Si interface by measuring the valence-band edges of HfO2 and Si.

原文英語
頁(從 - 到)1291-1293
頁數3
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
23
發行號3
DOIs
出版狀態已發佈 - 2005

ASJC Scopus subject areas

  • 凝聚態物理學
  • 電氣與電子工程

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