Depth profiles and chemical bonding states of graded doping and ultra-thin HfLaO high-k dielectrics deposited on silicon substrate

Pi Chun Juan, Chuan-Hsi Liu, Min Jou, Yi Kuan Chen, Yu Wei Liu, Chih Wei Hsu, Yi Hsien Chou, Jun You Lin

研究成果: 書貢獻/報告類型會議論文篇章

摘要

La dopant positioning at HfO 2 ultra-thin films was successfully achieved by the co-sputtering method. The depth profiles of graded doping HfLaO (7 nm)/p-Si structures after 850°C RTA were studied. From the nano-AES results, the out-diffusion of Hf atom into Si substrate increases when the La dopant is co-deposited in the upper bond and forming HfLaO/HfO 2 /Si structures. On the other hand, the out-diffusion of Hf atoms into Si substrate is suppressed when the La is doped in the lower bond and forming HfO 2 /HfLaO/Si structures. It is found that the chance to form silicate becomes insignificant due to less oxygen out-diffusion into Si in the later case. Above is consistent with the binding energies of our XPS results. The electrical properties of different doping locations were measured and compared. The thickness of silicate layer is suggested to be the origin of leakage current.

原文英語
主出版物標題INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
頁面672-673
頁數2
DOIs
出版狀態已發佈 - 2010 五月 5
事件2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, 中国
持續時間: 2010 一月 32010 一月 8

出版系列

名字INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

其他

其他2010 3rd International Nanoelectronics Conference, INEC 2010
國家中国
城市Hongkong
期間2010/01/032010/01/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

指紋 深入研究「Depth profiles and chemical bonding states of graded doping and ultra-thin HfLaO high-k dielectrics deposited on silicon substrate」主題。共同形成了獨特的指紋。

引用此