Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

T. S. Lay*, Y. Y. Liao, W. H. Hung, M. Hong, J. Kwo, J. P. Mannaerts

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

23 引文 斯高帕斯(Scopus)

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Chemistry

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Material Science