Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

T. S. Lay; Y. Y. Liao; W. H. Hung; M. Hong; J. Kwo; J. P. Mannaerts

doi:10.1016/j.jcrysgro.2004.12.128

Depth-profile study of the electronic structures at Ga₂O ₃(Gd₂O₃) and Gd₂O₃-GaN interfaces by X-ray photoelectron spectroscopy

T. S. Lay^*, Y. Y. Liao, W. H. Hung, M. Hong, J. Kwo, J. P. Mannaerts

^*此作品的通信作者

化學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

24 引文斯高帕斯（Scopus）

摘要

The depth profile of high-resolution photoelectron spectra at Ga ₂O₃(Gd₂O₃)-GaN and Gd ₂O₃-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar ⁺ sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga ₂O₃(Gd₂O₃)-GaN and Gd ₂O₃-GaN interfaces, respectively.

原文	英語
頁（從 - 到）	624-628
頁數	5
期刊	Journal of Crystal Growth
卷	278
發行號	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.128
出版狀態	已發佈 - 2005 5月 1
事件	13th International Conference on Molecular Beam Epitaxy - 持續時間: 2004 8月 22 → 2004 8月 27

ASJC Scopus subject areas

凝聚態物理學
無機化學
材料化學

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10.1016/j.jcrysgro.2004.12.128

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@article{a65fde71edb1481e9d39362acd14b550,

title = "Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy",

abstract = "The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.",

keywords = "A1. Interfaces, A3. Molecular beam epitaxy, B1. Gadolinium compounds, B1. Nitrides, B2. Dielectric materials, B2. Semiconducting gallium compounds",

author = "Lay, {T. S.} and Liao, {Y. Y.} and Hung, {W. H.} and M. Hong and J. Kwo and Mannaerts, {J. P.}",

note = "Funding Information: One of us (TSL) would like to thank the supports from the MOE Program for Promoting University Academic Excellence under Grant no. 91-E-FA08-1-4, and the National Science Council of Taiwan through funding Grants NSC-92-2215-E-110-008. Facility support at the NSRRC is gratefully acknowledged.; 13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.128",

language = "English",

volume = "278",

pages = "624--628",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "1-4",

}

TY - JOUR

T1 - Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

AU - Lay, T. S.

AU - Liao, Y. Y.

AU - Hung, W. H.

AU - Hong, M.

AU - Kwo, J.

AU - Mannaerts, J. P.

N1 - Funding Information: One of us (TSL) would like to thank the supports from the MOE Program for Promoting University Academic Excellence under Grant no. 91-E-FA08-1-4, and the National Science Council of Taiwan through funding Grants NSC-92-2215-E-110-008. Facility support at the NSRRC is gratefully acknowledged.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.

AB - The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.

KW - A1. Interfaces

KW - A3. Molecular beam epitaxy

KW - B1. Gadolinium compounds

KW - B1. Nitrides

KW - B2. Dielectric materials

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=18444388307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18444388307&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.12.128

DO - 10.1016/j.jcrysgro.2004.12.128

M3 - Conference article

AN - SCOPUS:18444388307

SN - 0022-0248

VL - 278

SP - 624

EP - 628

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

摘要

ASJC Scopus subject areas

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Depth-profile study of the electronic structures at Ga₂O ₃(Gd₂O₃) and Gd₂O₃-GaN interfaces by X-ray photoelectron spectroscopy