Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy

T. S. Lay, Y. Y. Liao, W. H. Hung, M. Hong, J. Kwo, J. P. Mannaerts

研究成果: 雜誌貢獻會議論文同行評審

23 引文 斯高帕斯(Scopus)

摘要

The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.

原文英語
頁(從 - 到)624-628
頁數5
期刊Journal of Crystal Growth
278
發行號1-4
DOIs
出版狀態已發佈 - 2005 五月 1
事件13th International Conference on Molecular Beam Epitaxy -
持續時間: 2004 八月 222004 八月 27

ASJC Scopus subject areas

  • 凝聚態物理學
  • 無機化學
  • 材料化學

指紋

深入研究「Depth-profile study of the electronic structures at Ga<sub>2</sub>O <sub>3</sub>(Gd<sub>2</sub>O<sub>3</sub>) and Gd<sub>2</sub>O<sub>3</sub>-GaN interfaces by X-ray photoelectron spectroscopy」主題。共同形成了獨特的指紋。

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