The depth profile of high-resolution photoelectron spectra at Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar + sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O-H bonding. The valence-band offsets (ΔEV) of ∼1.1 and 1.0 eV were also measured for the Ga 2O3(Gd2O3)-GaN and Gd 2O3-GaN interfaces, respectively.
|頁（從 - 到）||624-628|
|期刊||Journal of Crystal Growth|
|出版狀態||已發佈 - 2005 五月 1|
|事件||13th International Conference on Molecular Beam Epitaxy - |
持續時間: 2004 八月 22 → 2004 八月 27
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