Deposition of ZnO-In2O3-Ga2O3 (IGZO) thin films by using spray coating method

Chin Guo Kuo; I. Chun Lin; Chia I. Chuang; Cheng Fu Yang; Hsuan Yu Yang; Chia Ching Wu

doi:10.1201/b18737-5

Deposition of ZnO-In₂O₃-Ga₂O₃ (IGZO) thin films by using spray coating method

Chin Guo Kuo, I. Chun Lin, Chia I. Chuang, Cheng Fu Yang, Hsuan Yu Yang, Chia Ching Wu

工業教育學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

2 引文斯高帕斯（Scopus）

摘要

In this study, the micro-scale of In₂O₃, Ga₂O₃, and ZnO oxide powders (with mole ratio In₂O₃: Ga₂O₃: ZnO = 1:1:2, abbreviated as IGZO) were put into a nano-ground machine with the addition of 1 wt% KD1 dispersant for nano-scale IGZO particles’ dispersion. Then the 6 wt% IGZO particles were dispersed into Isopropyl Alcohol (IPA) to get the solution for SPM to prepare the IGZO thin films. 0.1 ml IGZO solution was sprayed on the 2 cm × 1 cm glass substrates and then the nano-scale IGZO solution was carried out for thermal treatment under different temperatures in a furnace in air. The annealing temperature was changed from 200°C to 700°C and the annealing time was 3 h. The effects of the annealing temperature on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmission spectrum, carrier concentration, carrier mobility, and resistivity of the IGZO thin films on glass substrates were studied. The measured results showed that the annealing temperature had large effect on the characteristics of the IGZO thin films.

原文	英語
主出版物標題	Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014
編輯	Teen-Hang Meen, Stephen D. Prior, Artde Donald Kin-Tak Lam
發行者	CRC Press/Balkema
頁面	11-14
頁數	4
ISBN（列印）	9781138027527
DOIs	https://doi.org/10.1201/b18737-5
出版狀態	已發佈 - 2015
事件	3rd International Conference on Innovation, Communication and Engineering, ICICE 2014 - Guiyang, Guizhou, 中国持續時間: 2014 10月 17 → 2014 10月 22

出版系列

名字	Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014

其他

其他	3rd International Conference on Innovation, Communication and Engineering, ICICE 2014
國家/地區	中国
城市	Guiyang, Guizhou
期間	2014/10/17 → 2014/10/22

ASJC Scopus subject areas

電腦網路與通信
資訊系統

存取文件

10.1201/b18737-5

其它文件與鏈接

Link to publication in Scopus

引用此

Kuo, C. G., Lin, I. C., Chuang, C. I., Yang, C. F., Yang, H. Y., & Wu, C. C. (2015). Deposition of ZnO-In₂O₃-Ga₂O₃ (IGZO) thin films by using spray coating method. 於 T.-H. Meen, S. D. Prior, & A. D. K.-T. Lam (編輯), Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014 (頁 11-14). (Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014). CRC Press/Balkema. https://doi.org/10.1201/b18737-5

Deposition of ZnO-In₂O₃-Ga₂O₃ (IGZO) thin films by using spray coating method. / Kuo, Chin Guo; Lin, I. Chun; Chuang, Chia I. 等.
Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014. 編輯 / Teen-Hang Meen; Stephen D. Prior; Artde Donald Kin-Tak Lam. CRC Press/Balkema, 2015. p. 11-14 (Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Kuo, CG, Lin, IC, Chuang, CI, Yang, CF, Yang, HY & Wu, CC 2015, Deposition of ZnO-In₂O₃-Ga₂O₃ (IGZO) thin films by using spray coating method. 於 T-H Meen, SD Prior & ADK-T Lam (編輯), Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014. Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014, CRC Press/Balkema, 頁 11-14, 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014, Guiyang, Guizhou, 中国, 2014/10/17. https://doi.org/10.1201/b18737-5

Kuo CG, Lin IC, Chuang CI, Yang CF, Yang HY, Wu CC. Deposition of ZnO-In₂O₃-Ga₂O₃ (IGZO) thin films by using spray coating method. 於 Meen TH, Prior SD, Lam ADKT, 編輯, Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014. CRC Press/Balkema. 2015. p. 11-14. (Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014). doi: 10.1201/b18737-5

Kuo, Chin Guo ; Lin, I. Chun ; Chuang, Chia I. 等. / Deposition of ZnO-In₂O₃-Ga₂O₃ (IGZO) thin films by using spray coating method. Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014. 編輯 / Teen-Hang Meen ; Stephen D. Prior ; Artde Donald Kin-Tak Lam. CRC Press/Balkema, 2015. 頁 11-14 (Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014).

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abstract = "In this study, the micro-scale of In2O3, Ga2O3, and ZnO oxide powders (with mole ratio In2O3: Ga2O3: ZnO = 1:1:2, abbreviated as IGZO) were put into a nano-ground machine with the addition of 1 wt% KD1 dispersant for nano-scale IGZO particles{\textquoteright} dispersion. Then the 6 wt% IGZO particles were dispersed into Isopropyl Alcohol (IPA) to get the solution for SPM to prepare the IGZO thin films. 0.1 ml IGZO solution was sprayed on the 2 cm × 1 cm glass substrates and then the nano-scale IGZO solution was carried out for thermal treatment under different temperatures in a furnace in air. The annealing temperature was changed from 200°C to 700°C and the annealing time was 3 h. The effects of the annealing temperature on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmission spectrum, carrier concentration, carrier mobility, and resistivity of the IGZO thin films on glass substrates were studied. The measured results showed that the annealing temperature had large effect on the characteristics of the IGZO thin films.",

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N2 - In this study, the micro-scale of In2O3, Ga2O3, and ZnO oxide powders (with mole ratio In2O3: Ga2O3: ZnO = 1:1:2, abbreviated as IGZO) were put into a nano-ground machine with the addition of 1 wt% KD1 dispersant for nano-scale IGZO particles’ dispersion. Then the 6 wt% IGZO particles were dispersed into Isopropyl Alcohol (IPA) to get the solution for SPM to prepare the IGZO thin films. 0.1 ml IGZO solution was sprayed on the 2 cm × 1 cm glass substrates and then the nano-scale IGZO solution was carried out for thermal treatment under different temperatures in a furnace in air. The annealing temperature was changed from 200°C to 700°C and the annealing time was 3 h. The effects of the annealing temperature on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmission spectrum, carrier concentration, carrier mobility, and resistivity of the IGZO thin films on glass substrates were studied. The measured results showed that the annealing temperature had large effect on the characteristics of the IGZO thin films.

AB - In this study, the micro-scale of In2O3, Ga2O3, and ZnO oxide powders (with mole ratio In2O3: Ga2O3: ZnO = 1:1:2, abbreviated as IGZO) were put into a nano-ground machine with the addition of 1 wt% KD1 dispersant for nano-scale IGZO particles’ dispersion. Then the 6 wt% IGZO particles were dispersed into Isopropyl Alcohol (IPA) to get the solution for SPM to prepare the IGZO thin films. 0.1 ml IGZO solution was sprayed on the 2 cm × 1 cm glass substrates and then the nano-scale IGZO solution was carried out for thermal treatment under different temperatures in a furnace in air. The annealing temperature was changed from 200°C to 700°C and the annealing time was 3 h. The effects of the annealing temperature on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmission spectrum, carrier concentration, carrier mobility, and resistivity of the IGZO thin films on glass substrates were studied. The measured results showed that the annealing temperature had large effect on the characteristics of the IGZO thin films.

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