In this study, the micro-scale of In2O3, Ga2O3, and ZnO oxide powders (with mole ratio In2O3: Ga2O3: ZnO = 1:1:2, abbreviated as IGZO) were put into a nano-ground machine with the addition of 1 wt% KD1 dispersant for nano-scale IGZO particles’ dispersion. Then the 6 wt% IGZO particles were dispersed into Isopropyl Alcohol (IPA) to get the solution for SPM to prepare the IGZO thin films. 0.1 ml IGZO solution was sprayed on the 2 cm × 1 cm glass substrates and then the nano-scale IGZO solution was carried out for thermal treatment under different temperatures in a furnace in air. The annealing temperature was changed from 200°C to 700°C and the annealing time was 3 h. The effects of the annealing temperature on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmission spectrum, carrier concentration, carrier mobility, and resistivity of the IGZO thin films on glass substrates were studied. The measured results showed that the annealing temperature had large effect on the characteristics of the IGZO thin films.